All MOSFET. CJA9452 Datasheet

 

CJA9452 Datasheet and Replacement


   Type Designator: CJA9452
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOT-89
 

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CJA9452 Datasheet (PDF)

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CJA9452

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA9452 N-Channel 20-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-89-3L 38m@10V20V 50m@4.5V4A80m@2.5V1. GATE 2. DRAIN Description 3. SOURCE The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low

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CJA9452

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA9451 P-Channel 20-V(D-S) MOSFET SOT-89-3L Description The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low 1. GATE on- resistance and cost-effectiveness. 2. DRAIN 3. SOURCE 1 2 2 3 Maximum ratings (

Datasheet: CJ3420 , CJ4153 , CJ502K , CJ8810 , CJ8820 , CJA03N10 , CJA03N10-HF , CJA9451 , 7N65 , CJB01N65B , CJB02N65 , CJB04N60A , CJB04N65 , CJB04N65A , CJB08N65 , CJB10N60 , CJB71N90 .

History: MPSY65M650 | IRFU2905ZPBF | AO4614B | OSG65R580FTF | DMN5L06-7 | CJD01N65B | P1203EV

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