CJB02N65 Datasheet. Specs and Replacement

Type Designator: CJB02N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm

Package: TO-263

CJB02N65 substitution

- MOSFET ⓘ Cross-Reference Search

 

CJB02N65 datasheet

 ..1. Size:128K  jiangsu
 cjb02n65.pdf pdf_icon

CJB02N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB02N65 N-Channel Power MOSFET TO-263-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hig... See More ⇒

Detailed specifications: CJ502K, CJ8810, CJ8820, CJA03N10, CJA03N10-HF, CJA9451, CJA9452, CJB01N65B, AON7408, CJB04N60A, CJB04N65, CJB04N65A, CJB08N65, CJB10N60, CJB71N90, CJD01N60, CJD01N65B

Keywords - CJB02N65 MOSFET specs

 CJB02N65 cross reference

 CJB02N65 equivalent finder

 CJB02N65 pdf lookup

 CJB02N65 substitution

 CJB02N65 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs