All MOSFET. CJD02N65 Datasheet

 

CJD02N65 Datasheet and Replacement


   Type Designator: CJD02N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5 nC
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: TO-251S
 

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CJD02N65 Datasheet (PDF)

 ..1. Size:377K  jiangsu
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CJD02N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD02N65 N-Channel Power MOSFET TO-251S GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high sp

 7.1. Size:391K  jiangsu
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CJD02N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD02N60 N-Channel Power MOSFET TO-251SGeneral Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanch

Datasheet: CJB04N65A , CJB08N65 , CJB10N60 , CJB71N90 , CJD01N60 , CJD01N65B , CJD01N80 , CJD02N60 , AON7410 , CJD04N60 , CJD04N60A , CJD04N60B , CJD04N65 , CJD04N65A , CJD05N60B , CJD4410 , CJD4435 .

History: BUZ73AL | CS9N65F

Keywords - CJD02N65 MOSFET datasheet

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