CJD4410 Datasheet and Replacement
Type Designator: CJD4410
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 15 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: TO-251
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CJD4410 Datasheet (PDF)
cjd4410.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD4410 N-Channel 30-V(D-S) MOSFET TO-2 51-3L FEATURE TrenchFET Power MOSFET 1. GATE 2. DRAIN APPLICATIONS 3. SOURCE Load Switch Battery Switch Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage
cjd4435.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD4435 P-Channel 30-V(D-S) MOSFET TO-251-3L FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. DRAIN 3. SOURCE Load Switch Battery Switch Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IPP120N08S4-03 | HLML6401 | JCS4N60RB | IXTA1N120P | HFD1N60F | FQA170N06 | AP85T03GH-HF
Keywords - CJD4410 MOSFET datasheet
CJD4410 cross reference
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History: IPP120N08S4-03 | HLML6401 | JCS4N60RB | IXTA1N120P | HFD1N60F | FQA170N06 | AP85T03GH-HF



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