CJI02N60 Datasheet. Specs and Replacement
Type Designator: CJI02N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 10 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 56 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
Package: TO-126
CJI02N60 substitution
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CJI02N60 datasheet
cji02n60.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate MOSFETS CJI02N60 N-Channel Power MOSFET TO-126 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche... See More ⇒
Detailed specifications: CJD04N60, CJD04N60A, CJD04N60B, CJD04N65, CJD04N65A, CJD05N60B, CJD4410, CJD4435, AON6380, CJK2305, CJK3407, CJK3415, CJL3407, CJL3415, CJL3443, CJM1216, CJP01N65B
Keywords - CJI02N60 MOSFET specs
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