All MOSFET. CJI02N60 Datasheet

 

CJI02N60 Datasheet and Replacement


   Type Designator: CJI02N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 10 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: TO-126
 

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CJI02N60 Datasheet (PDF)

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CJI02N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate MOSFETS CJI02N60 N-Channel Power MOSFET TO-126 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche

Datasheet: CJD04N60 , CJD04N60A , CJD04N60B , CJD04N65 , CJD04N65A , CJD05N60B , CJD4410 , CJD4435 , AON7506 , CJK2305 , CJK3407 , CJK3415 , CJL3407 , CJL3415 , CJL3443 , CJM1216 , CJP01N65B .

History: CJD05N60B | SIHFU9024 | SIHFU9210 | R6002END3 | HSH250N10 | HSH190N03 | IRF8721TR

Keywords - CJI02N60 MOSFET datasheet

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