CJK3407 Datasheet. Specs and Replacement

Type Designator: CJK3407  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT-23-3L

CJK3407 substitution

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CJK3407 datasheet

 ..1. Size:728K  jiangsu
 cjk3407.pdf pdf_icon

CJK3407

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK34 07 P-Channel 30-V(D-S) MOSFET SOT-23-3L ID V(BR)DSS RDS(on)MAX 60m @-10 V -4.1A -30V 87m @-4.5V 1. GATE 2. SOURCE 3. DRAIN D General Description The CJK3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for... See More ⇒

 8.1. Size:1634K  jiangsu
 cjk3401ah.pdf pdf_icon

CJK3407

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401AH P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L 50m @-10V -30V -4.2A 60 m @-4.5V m @-2.5V 85 FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devices Exceptional on-resistance and maximum ... See More ⇒

 8.2. Size:715K  jiangsu
 cjk3400a.pdf pdf_icon

CJK3407

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3400A N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L 32m @10V 30V 38m @4.5V 5.8A 45m @2.5V 1. GATE 2. SOURCE 3. DRAIN D FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load/Power Switching Exceptional on-r... See More ⇒

 8.3. Size:780K  jiangsu
 cjk3401a.pdf pdf_icon

CJK3407

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401A P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L m @-10V 60 -30V 70 m -4.2A @-4.5V m @-2.5V 85 1. GATE 2. SOURCE 3. DRAIN D FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devi... See More ⇒

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Detailed specifications: CJD04N60B, CJD04N65, CJD04N65A, CJD05N60B, CJD4410, CJD4435, CJI02N60, CJK2305, CS150N03A8, CJK3415, CJL3407, CJL3415, CJL3443, CJM1216, CJP01N65B, CJP02N60, CJP02N65

Keywords - CJK3407 MOSFET specs

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