All MOSFET. CJK3415 Datasheet

 

CJK3415 Datasheet and Replacement


   Type Designator: CJK3415
   Marking Code: R15
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17.2 nC
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT-23-3L
 

 CJK3415 substitution

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CJK3415 Datasheet (PDF)

 ..1. Size:289K  jiangsu
 cjk3415.pdf pdf_icon

CJK3415

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3415 P-Channel 20-V(D-S) MOSFET SOT-23-3L FEATURE 1. GATE Excellent RDS(ON), low gate charge,low gate voltages 2. SOURCE 3. DRAIN APPLICATIONS Load switch and in PWM applicatopns D MARKING: R15 G S Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value

 9.1. Size:1634K  jiangsu
 cjk3401ah.pdf pdf_icon

CJK3415

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401AH P-Channel Enhancement Mode Field Effect TransistorID V(BR)DSS RDS(on)MAX SOT-23-3L 50m@-10V-30V -4.2A60 m@-4.5Vm@-2.5V85FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devices Exceptional on-resistance and maximum

 9.2. Size:715K  jiangsu
 cjk3400a.pdf pdf_icon

CJK3415

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3400A N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L 32m@10V30V 38m@4.5V5.8A45m@2.5V1. GATE 2. SOURCE 3. DRAIN DFEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load/Power Switching Exceptional on-r

 9.3. Size:780K  jiangsu
 cjk3401a.pdf pdf_icon

CJK3415

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401A P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L m@-10V60 -30V 70 m -4.2A@-4.5Vm@-2.5V851. GATE 2. SOURCE 3. DRAIN DFEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devi

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - CJK3415 MOSFET datasheet

 CJK3415 cross reference
 CJK3415 equivalent finder
 CJK3415 lookup
 CJK3415 substitution
 CJK3415 replacement

 

 
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