CJL3407 Datasheet and Replacement. Cross Reference Search

CJL3407 Datasheet (PDF)

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL3407 P-Channel Enhancement Mode Field Effect Transistor SOT-23-6L General Description The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING: R7 Maximum rati

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL3443 P-Channel 20-V(D-S) MOSFET SOT-23-6L FEATURE Fast Switching Speed Low Gate Charge 1. GATE High Performance Trench Technology for extremely Low RDS(on) 2. DRAIN D 3. SOURCE D SD Description D G This P-Channel MOSFET is produced using advanced PowerTrench

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23- L Plastic-Encapsulate MOSFETS SOT-23- CJ 3415 P-Channel MOSFET FEATURE Excellent RDS(ON), low gate charge,low gate voltage High power and current handing capabilityAPPLICATION Load switch and in PWM applicatopns MARKING: R15 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value

Datasheet: CJD04N65A , CJD05N60B , CJD4410 , CJD4435 , CJI02N60 , CJK2305 , CJK3407 , CJK3415 , IRFP250 , CJL3415 , CJL3443 , CJM1216 , CJP01N65B , CJP02N60 , CJP02N65 , CJP02N80 , CJP04N60 .