All MOSFET. CJL3415 Datasheet

 

CJL3415 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CJL3415
   Marking Code: R15
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.2 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT-23-6L

 CJL3415 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJL3415 Datasheet (PDF)

 ..1. Size:279K  jiangsu
 cjl3415.pdf

CJL3415 CJL3415

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23- L Plastic-Encapsulate MOSFETS SOT-23- CJ 3415 P-Channel MOSFET FEATURE Excellent RDS(ON), low gate charge,low gate voltage High power and current handing capabilityAPPLICATION Load switch and in PWM applicatopns MARKING: R15 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value

 9.1. Size:401K  jiangsu
 cjl3443.pdf

CJL3415 CJL3415

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL3443 P-Channel 20-V(D-S) MOSFET SOT-23-6L FEATURE Fast Switching Speed Low Gate Charge 1. GATE High Performance Trench Technology for extremely Low RDS(on) 2. DRAIN D 3. SOURCE D SD Description D G This P-Channel MOSFET is produced using advanced PowerTrench

 9.2. Size:131K  jiangsu
 cjl3407.pdf

CJL3415 CJL3415

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL3407 P-Channel Enhancement Mode Field Effect Transistor SOT-23-6L General Description The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING: R7 Maximum rati

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