CJL3415 Datasheet. Specs and Replacement
Type Designator: CJL3415 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 205 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT-23-6L
CJL3415 substitution
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CJL3415 datasheet
cjl3415.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23- L Plastic-Encapsulate MOSFETS SOT-23- CJ 3415 P-Channel MOSFET FEATURE Excellent RDS(ON), low gate charge,low gate voltage High power and current handing capability APPLICATION Load switch and in PWM applicatopns MARKING R15 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value ... See More ⇒
cjl3443.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL3443 P-Channel 20-V(D-S) MOSFET SOT-23-6L FEATURE Fast Switching Speed Low Gate Charge 1. GATE High Performance Trench Technology for extremely Low RDS(on) 2. DRAIN D 3. SOURCE D S D Description D G This P-Channel MOSFET is produced using advanced PowerTrench ... See More ⇒
cjl3407.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL3407 P-Channel Enhancement Mode Field Effect Transistor SOT-23-6L General Description The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING R7 Maximum rati... See More ⇒
Detailed specifications: CJD05N60B, CJD4410, CJD4435, CJI02N60, CJK2305, CJK3407, CJK3415, CJL3407, STP80NF70, CJL3443, CJM1216, CJP01N65B, CJP02N60, CJP02N65, CJP02N80, CJP04N60, CJP04N60A
Keywords - CJL3415 MOSFET specs
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