All MOSFET. CJP07N60 Datasheet

 

CJP07N60 Datasheet and Replacement


   Type Designator: CJP07N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-220
 

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CJP07N60 Datasheet (PDF)

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CJP07N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP07N60 N-Channel Power MOSFET TO-220-3L General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in ava

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CJP07N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP07N65 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast 1. GATE recovery time. Desighed for high vo

Datasheet: CJP02N65 , CJP02N80 , CJP04N60 , CJP04N60A , CJP04N65 , CJP04N65A , CJP05N60 , CJP05N60B , 7N60 , CJP07N65 , CJP08N60 , CJP08N65 , CJP10N60 , CJP10N65 , CJP12N60 , CJP12N65 , CJP71N90 .

History: RSH070P05TB1 | APT47N60BCFG | AON7518 | SSM3K335R | CS50N06P | SHD219303 | KU310N10F

Keywords - CJP07N60 MOSFET datasheet

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