CJP07N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: CJP07N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 38 nC
trⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO-220
CJP07N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CJP07N60 Datasheet (PDF)
cjp07n60.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP07N60 N-Channel Power MOSFET TO-220-3L General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in ava
cjp07n65.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP07N65 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast 1. GATE recovery time. Desighed for high vo
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