All MOSFET. CJP08N60 Datasheet

 

CJP08N60 Datasheet and Replacement


   Type Designator: CJP08N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 165 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-220
 

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CJP08N60 Datasheet (PDF)

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CJP08N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP08N60 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hig

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CJP08N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP08N65 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hig

Datasheet: CJP04N60 , CJP04N60A , CJP04N65 , CJP04N65A , CJP05N60 , CJP05N60B , CJP07N60 , CJP07N65 , 2N60 , CJP08N65 , CJP10N60 , CJP10N65 , CJP12N60 , CJP12N65 , CJP71N90 , CJP75N75 , CJP75N80 .

History: APT60M60JLL | CS50N06P | IPP65R600C6 | SSM3K335R | NCV8408 | KPE4403A2 | APT47N60BCFG

Keywords - CJP08N60 MOSFET datasheet

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