All MOSFET. CJP75N75 Datasheet

 

CJP75N75 Datasheet and Replacement


   Type Designator: CJP75N75
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15.6 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-220
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CJP75N75 Datasheet (PDF)

 ..1. Size:104K  jiangsu
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CJP75N75

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP75N75 N-Channel Power MOSFET TO-220-3L DESCRIPTION The CJP75N75 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. Good stability and 1. GATE uniformity with high EAS .This device is suitable for use in PWM, 2. DRAIN load switching and gen

 8.1. Size:120K  jiangsu
 cjp75n80.pdf pdf_icon

CJP75N75

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP75N80 N-Channel Power MOSFET TO-220-3L DESCRIPTION The CJP75N80 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. Good stability and 1. GATE uniformity with high EAS .This device is suitable for use in PWM, 2. DRAIN load switching and gen

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NTD4855N-1G | SPD04N60S5 | AP6679GI-HF | DM12N65C | FCPF7N60YDTU | SM6A12NSFP

Keywords - CJP75N75 MOSFET datasheet

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