All MOSFET. CJP75N80 Datasheet

 

CJP75N80 Datasheet and Replacement


   Type Designator: CJP75N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11.8 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-220
 

 CJP75N80 substitution

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CJP75N80 Datasheet (PDF)

 ..1. Size:120K  jiangsu
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CJP75N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP75N80 N-Channel Power MOSFET TO-220-3L DESCRIPTION The CJP75N80 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. Good stability and 1. GATE uniformity with high EAS .This device is suitable for use in PWM, 2. DRAIN load switching and gen

 8.1. Size:104K  jiangsu
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CJP75N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP75N75 N-Channel Power MOSFET TO-220-3L DESCRIPTION The CJP75N75 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. Good stability and 1. GATE uniformity with high EAS .This device is suitable for use in PWM, 2. DRAIN load switching and gen

Datasheet: CJP08N60 , CJP08N65 , CJP10N60 , CJP10N65 , CJP12N60 , CJP12N65 , CJP71N90 , CJP75N75 , IRF520 , CJP85N80 , CJPF01N65B , CJPF02N60 , CJPF02N65 , CJPF03N80 , CJPF04N60 , CJPF04N60A , CJPF04N65 .

History: NCE8295AD | 2SJ244 | BLA1011-200 | P9515BD | BUZ54A | IPA057N06N3 | SWN2N70D

Keywords - CJP75N80 MOSFET datasheet

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