CJP75N80 Datasheet. Specs and Replacement
Type Designator: CJP75N80 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11.8 nS
Cossⓘ - Output Capacitance: 340 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-220
CJP75N80 substitution
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CJP75N80 datasheet
cjp75n80.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP75N80 N-Channel Power MOSFET TO-220-3L DESCRIPTION The CJP75N80 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. Good stability and 1. GATE uniformity with high EAS .This device is suitable for use in PWM, 2. DRAIN load switching and gen... See More ⇒
cjp75n75.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP75N75 N-Channel Power MOSFET TO-220-3L DESCRIPTION The CJP75N75 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. Good stability and 1. GATE uniformity with high EAS .This device is suitable for use in PWM, 2. DRAIN load switching and gen... See More ⇒
Detailed specifications: CJP08N60, CJP08N65, CJP10N60, CJP10N65, CJP12N60, CJP12N65, CJP71N90, CJP75N75, 75N75, CJP85N80, CJPF01N65B, CJPF02N60, CJPF02N65, CJPF03N80, CJPF04N60, CJPF04N60A, CJPF04N65
Keywords - CJP75N80 MOSFET specs
CJP75N80 cross reference
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