CJV01N60 Datasheet. Specs and Replacement
Type Designator: CJV01N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 28 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
Package: TO-92
CJV01N60 substitution
- MOSFET ⓘ Cross-Reference Search
CJV01N60 datasheet
cjv01n60.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS CJV01N60 N-Channel Power MOSFET TO-92 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and... See More ⇒
cjv01n65b.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS CJV01N65B N-Channel Power MOSFET TO-92 GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed... See More ⇒
Detailed specifications: CJU04N60, CJU04N60A, CJU04N65, CJU04N65A, CJU05N60, CJU05N60B, CJU10N10, CJU4828, 10N60, CJV01N65B, CJW1012, CTLDM303N-M832DS, CTLDM304P-M832DS, CTLDM3590, CTLDM7002A-M621, CTLDM7002A-M621H, CTLDM7003-M621
Keywords - CJV01N60 MOSFET specs
CJV01N60 cross reference
CJV01N60 equivalent finder
CJV01N60 pdf lookup
CJV01N60 substitution
CJV01N60 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
