All MOSFET. CJV01N60 Datasheet

 

CJV01N60 Datasheet and Replacement


   Type Designator: CJV01N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: TO-92
 

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CJV01N60 Datasheet (PDF)

 ..1. Size:290K  jiangsu
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CJV01N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETSCJV01N60 N-Channel Power MOSFET TO-92General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and

 7.1. Size:129K  jiangsu
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CJV01N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS CJV01N65B N-Channel Power MOSFET TO-92 GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed

Datasheet: CJU04N60 , CJU04N60A , CJU04N65 , CJU04N65A , CJU05N60 , CJU05N60B , CJU10N10 , CJU4828 , 7N65 , CJV01N65B , CJW1012 , CTLDM303N-M832DS , CTLDM304P-M832DS , CTLDM3590 , CTLDM7002A-M621 , CTLDM7002A-M621H , CTLDM7003-M621 .

History: DMTH6009LK3 | DMP3065LVT

Keywords - CJV01N60 MOSFET datasheet

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