All MOSFET. CTLDM304P-M832DS Datasheet

 

CTLDM304P-M832DS MOSFET. Datasheet pdf. Equivalent


   Type Designator: CTLDM304P-M832DS
   Marking Code: C430
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 4.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.4 nC
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TLM832DS

 CTLDM304P-M832DS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CTLDM304P-M832DS Datasheet (PDF)

 0.1. Size:678K  central
 ctldm304p-m832ds.pdf

CTLDM304P-M832DS CTLDM304P-M832DS

CTLDM304P-M832DSSURFACE MOUNTwww.centralsemi.comDUAL P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM304P-M832DSSILICON MOSFETis a dual enhancement-mode P-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. M

 7.1. Size:678K  central
 ctldm303n-m832ds.pdf

CTLDM304P-M832DS CTLDM304P-M832DS

CTLDM303N-M832DSSURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM303N-M832DSSILICON MOSFETis a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.MA

 8.1. Size:1156K  central
 ctldm3590.pdf

CTLDM304P-M832DS CTLDM304P-M832DS

CTLDM3590SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM3590 isSILICON MOSFETan enhancement-mode N-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics.MARKING CODE: 1FEA

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: NDP708A

 

 
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