CTLDM8120-M621H Datasheet. Specs and Replacement

Type Designator: CTLDM8120-M621H  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.86 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.142 Ohm

Package: TLM621H

CTLDM8120-M621H substitution

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CTLDM8120-M621H datasheet

 0.1. Size:418K  central
 ctldm8120-m621h.pdf pdf_icon

CTLDM8120-M621H

CTLDM8120-M621H SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM8120-M621H is a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package. MARKING CODE CNF TLM621H CASE Device is Halogen Free by design FEATURES APPLICATIONS Low rDS(ON)... See More ⇒

 3.1. Size:466K  central
 ctldm8120-m832d.pdf pdf_icon

CTLDM8120-M621H

CTLDM8120-M832D SURFACE MOUNT www.centralsemi.com DUAL, P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFETS CTLDM8120-M832D is an Enhancement-mode Dual P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt... See More ⇒

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 ctldm8002a-m621.pdf pdf_icon

CTLDM8120-M621H

CTLDM8002A-M621 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM8002A-M621 is a Silicon P-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package. MARKING CODE CN FEATURES Low rDS(on) TLM621 CASE Low VDS(on) Low Threshold Voltage APPLICATIONS Fast Switchi... See More ⇒

 8.2. Size:458K  central
 ctldm8002a-m621h.pdf pdf_icon

CTLDM8120-M621H

CTLDM8002A-M621H SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM8002A-M621H SILICON MOSFET is a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermal efficient, 1.5mm x 2mm TLM package. MARKING CODE CNC FEATURES Low rDS(on) TLM621H CASE Low VDS(on) APPLICATIONS Low Threshold V... See More ⇒

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Detailed specifications: CTLDM7120-M621, CTLDM7120-M621H, CTLDM7120-M832D, CTLDM7120-M832DS, CTLDM7181-M832D, CTLDM7590, CTLDM8002A-M621, CTLDM8002A-M621H, K3569, CTLDM8120-M832D, CTLM7110-M832D, CTLM8110-M832D, CTM01N60, CTM02N60, CTM04N60, CTM06N60, CTM07N60

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