CTLDM8120-M621H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CTLDM8120-M621H
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 1.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.86 A
Tj ⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 60 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.142 Ohm
Тип корпуса: TLM621H
Аналог (замена) для CTLDM8120-M621H
CTLDM8120-M621H Datasheet (PDF)
ctldm8120-m621h.pdf

CTLDM8120-M621HSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM8120-M621H is a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package.MARKING CODE: CNFTLM621H CASE Device is Halogen Free by designFEATURES:APPLICATIONS: Low rDS(ON)
ctldm8120-m832d.pdf

CTLDM8120-M832DSURFACE MOUNTwww.centralsemi.comDUAL, P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETSCTLDM8120-M832D is an Enhancement-mode Dual P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt
ctldm8002a-m621.pdf

CTLDM8002A-M621SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM8002A-M621 is a Silicon P-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package.MARKING CODE: CNFEATURES: Low rDS(on)TLM621 CASE Low VDS(on) Low Threshold VoltageAPPLICATIONS: Fast Switchi
ctldm8002a-m621h.pdf

CTLDM8002A-M621HSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM8002A-M621H SILICON MOSFETis a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermal efficient, 1.5mm x 2mm TLM package.MARKING CODE: CNCFEATURES: Low rDS(on)TLM621H CASE Low VDS(on)APPLICATIONS: Low Threshold V
Другие MOSFET... CTLDM7120-M621 , CTLDM7120-M621H , CTLDM7120-M832D , CTLDM7120-M832DS , CTLDM7181-M832D , CTLDM7590 , CTLDM8002A-M621 , CTLDM8002A-M621H , SPP20N60C3 , CTLDM8120-M832D , CTLM7110-M832D , CTLM8110-M832D , CTM01N60 , CTM02N60 , CTM04N60 , CTM06N60 , CTM07N60 .
History: IRF6619 | DMG6301UDW | RJK5026DPE | 3N70L-TF3-T | TPC8301
History: IRF6619 | DMG6301UDW | RJK5026DPE | 3N70L-TF3-T | TPC8301



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