All MOSFET. CTM02N60 Datasheet

 

CTM02N60 Datasheet and Replacement


   Type Designator: CTM02N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: TO-220 TO-220F TO-252 TO-251
 

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CTM02N60 Datasheet (PDF)

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CTM02N60

CTM02N60CTM02N60Crownpo TechnologyCrownpo TechnologyPower MOSFETFeatures General DescriptionRobust High Voltage TerminationThis high voltage MOSFET uses an advanced terminationAvalanche Energy Specifiedscheme to provide enhanced voltage-blocking capabilitySource-to-Drain Diode Recovery Time Comparable to awithout degrading performance over time. In addition,

Datasheet: CTLDM7590 , CTLDM8002A-M621 , CTLDM8002A-M621H , CTLDM8120-M621H , CTLDM8120-M832D , CTLM7110-M832D , CTLM8110-M832D , CTM01N60 , IRFB3607 , CTM04N60 , CTM06N60 , CTM07N60 , CTM08N50 , CTM09N20 , CTM14N50 , CTM18N20 , CTM2N7002 .

History: HFD1N65S | KU310N10F | AM2344N | SSM3K335R | APT47N60BCFG | P0420AI | CS50N06P

Keywords - CTM02N60 MOSFET datasheet

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