All MOSFET. CTM02N60 Datasheet

 

CTM02N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CTM02N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: TO-220 TO-220F TO-252 TO-251

 CTM02N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CTM02N60 Datasheet (PDF)

 ..1. Size:98K  crownpo
 ctm02n60.pdf

CTM02N60 CTM02N60

CTM02N60CTM02N60Crownpo TechnologyCrownpo TechnologyPower MOSFETFeatures General DescriptionRobust High Voltage TerminationThis high voltage MOSFET uses an advanced terminationAvalanche Energy Specifiedscheme to provide enhanced voltage-blocking capabilitySource-to-Drain Diode Recovery Time Comparable to awithout degrading performance over time. In addition,

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: NTTFS4C08N

 

 
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