CTM08N50 Datasheet. Specs and Replacement
Type Designator: CTM08N50 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
CTM08N50 substitution
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CTM08N50 datasheet
ctm08n50.pdf
CTM08N50 CTM08N50 Crownpo Technology Crownpo Technology Power MOSFET Features General Description Robust High Voltage Termination This high voltage MOSFET uses an advanced termination Avalanche Energy Specified scheme to provide enhanced voltage-blocking capability Source-to-Drain Diode Recovery Time Comparable to a without degrading performance over time. In addition,... See More ⇒
Detailed specifications: CTLDM8120-M832D, CTLM7110-M832D, CTLM8110-M832D, CTM01N60, CTM02N60, CTM04N60, CTM06N60, CTM07N60, 5N65, CTM09N20, CTM14N50, CTM18N20, CTM2N7002, CTN2302, CTN2304, CTP2303, CWDM3011N
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