All MOSFET. CTM08N50 Datasheet

 

CTM08N50 Datasheet and Replacement


   Type Designator: CTM08N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220 TO-220F
 

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CTM08N50 Datasheet (PDF)

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CTM08N50

CTM08N50CTM08N50Crownpo TechnologyCrownpo TechnologyPower MOSFETFeatures General DescriptionRobust High Voltage TerminationThis high voltage MOSFET uses an advanced terminationAvalanche Energy Specifiedscheme to provide enhanced voltage-blocking capabilitySource-to-Drain Diode Recovery Time Comparable to awithout degrading performance over time. In addition,

Datasheet: CTLDM8120-M832D , CTLM7110-M832D , CTLM8110-M832D , CTM01N60 , CTM02N60 , CTM04N60 , CTM06N60 , CTM07N60 , 4435 , CTM09N20 , CTM14N50 , CTM18N20 , CTM2N7002 , CTN2302 , CTN2304 , CTP2303 , CWDM3011N .

History: HM2309APR | IAUC100N04S6N015 | RQA0011DNS | RU3520H | EFC6612R

Keywords - CTM08N50 MOSFET datasheet

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