CWDM3011N Datasheet. Specs and Replacement

Type Designator: CWDM3011N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOIC-8

CWDM3011N substitution

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CWDM3011N datasheet

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CWDM3011N

CWDM3011N SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CWDM3011N is MOSFET a high current silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MARKING CODE... See More ⇒

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CWDM3011N

CWDM3011P SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CWDM3011P is MOSFET a high current silicon P-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET has high current capability with beneficially low rDS(ON), and low gate charge. MARKING CODE C3011P SOIC... See More ⇒

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CWDM3011N

CWDM305ND SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CWDM305ND is SILICON MOSFET a dual, high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. M... See More ⇒

 8.2. Size:654K  central
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CWDM3011N

CWDM305PD SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CWDM305PD SILICON MOSFET is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshol... See More ⇒

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Detailed specifications: CTM08N50, CTM09N20, CTM14N50, CTM18N20, CTM2N7002, CTN2302, CTN2304, CTP2303, STP80NF70, CWDM3011P, CWDM305N, CWDM305ND, CWDM305P, CWDM305PD, CXDM1002N, CXDM3069N, CXDM4060N

Keywords - CWDM3011N MOSFET specs

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