All MOSFET. CXDM4060P Datasheet

 

CXDM4060P MOSFET. Datasheet pdf. Equivalent


   Type Designator: CXDM4060P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.5 nC
   Cossⓘ - Output Capacitance: 56 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT-89

 CXDM4060P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CXDM4060P Datasheet (PDF)

 ..1. Size:848K  central
 cxdm4060p.pdf

CXDM4060P CXDM4060P

CXDM4060PSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CXDM4060P is aMOSFEThigh current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET features high current, low rDS(ON), low threshold voltage, and low gate charge.MARKING: FULL PART NUMBER

 6.1. Size:839K  central
 cxdm4060n.pdf

CXDM4060P CXDM4060P

CXDM4060NSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CXDM4060N is aMOSFEThigh current silicon N-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier anddriver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current.MARKING: FULL PART NUMBER

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SNP250L06F

 

 
Back to Top