All MOSFET. CXDM4060P Datasheet

 

CXDM4060P Datasheet and Replacement


   Type Designator: CXDM4060P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT-89
 

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CXDM4060P Datasheet (PDF)

 ..1. Size:848K  central
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CXDM4060P

CXDM4060PSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CXDM4060P is aMOSFEThigh current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET features high current, low rDS(ON), low threshold voltage, and low gate charge.MARKING: FULL PART NUMBER

 6.1. Size:839K  central
cxdm4060n.pdf pdf_icon

CXDM4060P

CXDM4060NSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CXDM4060N is aMOSFEThigh current silicon N-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier anddriver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current.MARKING: FULL PART NUMBER

Datasheet: CWDM3011P , CWDM305N , CWDM305ND , CWDM305P , CWDM305PD , CXDM1002N , CXDM3069N , CXDM4060N , STP80NF70 , CXDM6053N , CZDM1003N , D55NF06 , D84DM2 , D84DN2 , DE150-101N09A , DE150-102N02A , DE150-201N09A .

History: 2SK1446 | PHD82NQ03LT | BUK9624-55A | SVF2N60CNF

Keywords - CXDM4060P MOSFET datasheet

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