All MOSFET. CXDM4060P Datasheet

 

CXDM4060P Datasheet and Replacement


   Type Designator: CXDM4060P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 56 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT-89
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CXDM4060P Datasheet (PDF)

 ..1. Size:848K  central
 cxdm4060p.pdf pdf_icon

CXDM4060P

CXDM4060PSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CXDM4060P is aMOSFEThigh current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET features high current, low rDS(ON), low threshold voltage, and low gate charge.MARKING: FULL PART NUMBER

 6.1. Size:839K  central
 cxdm4060n.pdf pdf_icon

CXDM4060P

CXDM4060NSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CXDM4060N is aMOSFEThigh current silicon N-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier anddriver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current.MARKING: FULL PART NUMBER

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

Keywords - CXDM4060P MOSFET datasheet

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