CXDM6053N Datasheet. Specs and Replacement
Type Designator: CXDM6053N 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 49 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: SOT-89
CXDM6053N substitution
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CXDM6053N datasheet
cxdm6053n.pdf
CXDM6053N SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CXDM6053N is SILICON MOSFET a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. MARKING FULL PART NUMB... See More ⇒
Detailed specifications: CWDM305N, CWDM305ND, CWDM305P, CWDM305PD, CXDM1002N, CXDM3069N, CXDM4060N, CXDM4060P, 5N60, CZDM1003N, D55NF06, D84DM2, D84DN2, DE150-101N09A, DE150-102N02A, DE150-201N09A, DE150-501N04A
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