All MOSFET. CXDM6053N Datasheet

 

CXDM6053N Datasheet and Replacement


   Type Designator: CXDM6053N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 49 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: SOT-89

 CXDM6053N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CXDM6053N Datasheet (PDF)

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CXDM6053N

CXDM6053N SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CXDM6053N is SILICON MOSFET a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. MARKING FULL PART NUMB... See More ⇒

Datasheet: CWDM305N , CWDM305ND , CWDM305P , CWDM305PD , CXDM1002N , CXDM3069N , CXDM4060N , CXDM4060P , 5N60 , CZDM1003N , D55NF06 , D84DM2 , D84DN2 , DE150-101N09A , DE150-102N02A , DE150-201N09A , DE150-501N04A .

History: MP3205B

Keywords - CXDM6053N MOSFET datasheet

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