All MOSFET. CXDM6053N Datasheet

 

CXDM6053N Datasheet and Replacement


   Type Designator: CXDM6053N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 49 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: SOT-89
 

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CXDM6053N Datasheet (PDF)

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CXDM6053N

CXDM6053NSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CXDM6053N is SILICON MOSFETa high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current.MARKING: FULL PART NUMB

Datasheet: CWDM305N , CWDM305ND , CWDM305P , CWDM305PD , CXDM1002N , CXDM3069N , CXDM4060N , CXDM4060P , 13N50 , CZDM1003N , D55NF06 , D84DM2 , D84DN2 , DE150-101N09A , DE150-102N02A , DE150-201N09A , DE150-501N04A .

History: FTK2N65P

Keywords - CXDM6053N MOSFET datasheet

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