DE150-201N09A
MOSFET. Datasheet pdf. Equivalent
Type Designator: DE150-201N09A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 200
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 28
nC
Cossⓘ -
Output Capacitance: 130
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package: DE150
DE150-201N09A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DE150-201N09A
Datasheet (PDF)
..1. Size:144K ixys
de150-201n09a.pdf
DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 200 V High dv/dt Nanosecond Switching ID25 = 15 A Ideal for Class C, D, & E Applications RDS(on) 0.2 Symbol Test Conditions Maximum Ratings PDC = 200 W TJ = 25C to 150C VDSS 200 V TJ = 25C to 150C; RGS = 1 M VDGR 200 V Continuous VGS 20 V Transi
8.1. Size:160K ixys
de150-102n02a.pdf
DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt Nanosecond Switching ID25 = 2 A Symbol Test Conditions Maximum Ratings RDS(on) = 7.8 TJ = 25C to 150C PDC = 200W VDSS 1000 VTJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 VTransient VGSM 30 VTc = 25C ID25 2 ATc = 25C, pulse w
8.2. Size:144K ixys
de150-101n09a.pdf
DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 100 V High dv/dt Nanosecond Switching ID25 = 9.0 A Ideal for Class C, D, & E Applications RDS(on) 0.16 Symbol Test Conditions Maximum Ratings PDC = 200 W TJ = 25C to 150C VDSS 100 V TJ = 25C to 150C; RGS = 1 M VDGR 100 V Continuous VGS 20 V Tran
8.3. Size:142K ixys
de150-501n04a.pdf
DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 4.5 A RDS(on) 1.5 Symbol Test Conditions Maximum Ratings PDC = 200W TJ = 25C to 150C VDSS 500 V TJ = 25C to 150C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25C ID25 4.5 A
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