DE375-501N21A MOSFET. Datasheet pdf. Equivalent
Type Designator: DE375-501N21A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 940 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 70 nC
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: DE375
DE375-501N21A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DE375-501N21A Datasheet (PDF)
de375-501n21a.pdf
DE375-501N21A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 25 A 50MHz Maximum Frequency RDS(on) = 0.35 Symbol Test Conditions Maximum Ratings PDC = 940 W TJ = 25C to 150C VDSS 500 V TJ = 25C to 150C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Tr
de375-102n12a.pdf
DE375-102N12A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt VDSS = 1000 V Nanosecond Switching ID25 = 12 A 50MHz Maximum Frequency RDS(on) 1.05 Symbol Test Conditions Maximum Ratings TJ = 25C to 150C PDC = 940 W VDSS 1000 V TJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transient VGSM
de375-102n10a.pdf
DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt Nanosecond Switching ID25 = 10 A Ideal for Class C, D, & E Applications RDS(on) 1.2 Symbol Test Conditions Maximum Ratings PDC = 940 W TJ = 25C to 150C VDSS 1000 V TJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Tra
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: P2804HVG
History: P2804HVG
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