DI9405 Datasheet and Replacement

DI9405SINGLE P-CHANNEL ENHANCEMENT MODEFIELD EFFECT TRANSISTORPOWER SEMICONDUCTORFeatures High Cell Density DMOS Technology Low On-State Resistance High Power and Current CapabilitySO-8A Fast Switching SpeedDim Min Max High Transient Tolerance8 7 6 5A 3.94 4.19B 3.20 3.40TOPH BC 0.381 0.495VIEWD 2.67 3.055D 4 GE 0.89 1.021 2 3 4D

June 2014FDI9406_F085N-Channel PowerTrench MOSFET40 V, 110 A, 2.2 m DFeatures Typ RDS(on) = 1.73m at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80AG UIS Capability RoHS Compliant Qualified to AEC Q101TO-262ABSFDI SERIESApplications Automotive Engine ControlForcurrentpackagedrawing,pleaserefertotheFairchild Powertrai

DI9400SINGLE P-CHANNEL ENHANCEMENT MODEFIELD EFFECT TRANSISTORFeatures High Cell Density DMOS Technology Lower On-State Resistance High Power and Current CapabilitySO-8A Fast Switching SpeedDim Min Max High Transient Tolerance8 7 6 5A 3.94 4.19B 3.20 3.40TOPH BVIEWC 0.381 0.495D 2.67 3.051 2 3 4E 0.89 1.02GC G 0.527 0.679EJ 0.41 NominalJDK

isc N-Channel MOSFET Transistor FDI9406FEATURESDrain Current I =80A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power su pplies and generalpurpose