DK48N18 Datasheet. Specs and Replacement

Type Designator: DK48N18  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 231 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 158 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 967 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO-220

DK48N18 substitution

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DK48N18 datasheet

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DK48N18

DK48N18 Pb DK48N18 Pb Free Plating Product 70V,158A N-Channel Trench Process Power MOSFET General Description DK48N18 The DK48N18 is N-channel MOS Field Effect Transistor (TO-220 HeatSink) designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS G Fea... See More ⇒

 9.1. Size:1176K  thinkisemi
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DK48N18

DK48N88 Pb DK48N88 Pb Free Plating Product 70V,92A N-Channel Trench Process Power MOSFET General Description The DK48N88 is N-channel MOS Field Effect Transistor DK48N88 designed for high current switching applications. Rugged EAS (TO-220 HeatSink) capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D... See More ⇒

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DK48N18

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DK48N18

DK48N75 Pb DK48N75 Pb Free Plating Product 70V,68A N-Channel Trench Process Power MOSFET General Description The is N-channel MOS Field Effect Transistor DK48N75 designed for high current switching applications. Rugged EAS DK48N75 (TO-220 HeatSink) capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features DS... See More ⇒

Detailed specifications: DE375-501N21A, DE475-102N20A, DE475-102N21A, DE475-501N44A, DI9400T, DI9405, DI9430T, DI9435T, AON7403, DK48N75, DK48N78, DK48N80, DK48N88, DK64N90, DK64N90B, DK64N90F, DKI03038

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