Справочник MOSFET. DK48N18

 

DK48N18 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DK48N18
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 231 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 70 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 158 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 967 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0042 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для DK48N18

 

 

DK48N18 Datasheet (PDF)

 ..1. Size:1047K  thinkisemi
 dk48n18.pdf

DK48N18 DK48N18

DK48N18 PbDK48N18Pb Free Plating Product70V,158A N-Channel Trench Process Power MOSFETGeneral Description DK48N18The DK48N18 is N-channel MOS Field Effect Transistor (TO-220 HeatSink)designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DSGFea

 9.1. Size:1176K  thinkisemi
 dk48n88.pdf

DK48N18 DK48N18

DK48N88 PbDK48N88Pb Free Plating Product70V,92A N-Channel Trench Process Power MOSFETGeneral Description The DK48N88 is N-channel MOS Field Effect Transistor DK48N88designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D

 9.2. Size:1016K  thinkisemi
 dk48n80.pdf

DK48N18 DK48N18

DK48N80 PbDK48N80Pb Free Plating Product70V,87A N-Channel Trench Process Power MOSFETGeneral Description The DK48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS DK48N80capability and ultra low RDS(ON) is suitable for PWM, load (TO-220 HeatSink)switching especially for E-Bike controller applications. Features

 9.3. Size:724K  thinkisemi
 dk48n75.pdf

DK48N18 DK48N18

DK48N75 PbDK48N75Pb Free Plating Product70V,68A N-Channel Trench Process Power MOSFETGeneral Description The is N-channel MOS Field Effect Transistor DK48N75designed for high current switching applications. Rugged EAS DK48N75(TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features DS

 9.4. Size:1018K  thinkisemi
 dk48n78.pdf

DK48N18 DK48N18

DK48N78 PbDK48N78Pb Free Plating Product70V,80A N-Channel Trench Process Power MOSFETGeneral Description The DK48N78 is N-channel MOS Field Effect Transistor DK48N78designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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