All MOSFET. DL2M100N5 Datasheet

 

DL2M100N5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DL2M100N5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1000 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 250 nC
   trⓘ - Rise Time: 700 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: 6DM-2

 DL2M100N5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DL2M100N5 Datasheet (PDF)

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 dl2m100n5.pdf

DL2M100N5 DL2M100N5

D WTMD WTMDAWIN ElectronicsDAWIN Electronics DL2M100N5Apr. 2008500V DUAL N-Channel MOSFETDescriptionEquivalent Circuit and Package DAWINS Dual power MOSFET devices are designed for switching applications of high voltage and current. (You have to connect external Equivalent Circuit fast recovery diode reverse connected across each MOSFET)The mounting base of the module

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFU3709Z | IXFN26N90 | IXFH88N20Q | TSM2NB60CI | ZVN3306ASTZ | 2SJ539 | HUFA76423S3S

 

 
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