SFH9154 Datasheet and Replacement
Type Designator: SFH9154
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 204 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 100 nC
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO3P
SFH9154 substitution
SFH9154 Datasheet (PDF)
sfh9154.pdf

SFH9154Advanced Power MOSFETFEATURESBVDSS = -150 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -18 A Improved Gate Charge Extended Safe Operating AreaTO-3P 150oC Operating Temperature Lower Leakage Current : 10 A(Max.) @ VDS = -150V1 Lower RDS(ON) : 0.140 (Typ.)231.Gate 2. Drain 3. SourceAbsol
sfh9154.pdf

INCHANGE Semiconductorisc P-Channel MOSFET Transistor SFH9154FEATURESWith TO-3PN packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T
sfh9140.pdf

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -19 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = -100V1 Lower RDS(ON) : 0.161 (Typ.)231.Gate 2. Drain 3. SourceAbsolute Maximum Ra
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