SFH9154
MOSFET. Datasheet pdf. Equivalent
Type Designator: SFH9154
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 204
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 100
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 400
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package:
TO3P
SFH9154
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFH9154
Datasheet (PDF)
..1. Size:231K fairchild semi
sfh9154.pdf 
SFH9154Advanced Power MOSFETFEATURESBVDSS = -150 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -18 A Improved Gate Charge Extended Safe Operating AreaTO-3P 150oC Operating Temperature Lower Leakage Current : 10 A(Max.) @ VDS = -150V1 Lower RDS(ON) : 0.140 (Typ.)231.Gate 2. Drain 3. SourceAbsol
..2. Size:212K inchange semiconductor
sfh9154.pdf
INCHANGE Semiconductorisc P-Channel MOSFET Transistor SFH9154FEATURESWith TO-3PN packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T
9.1. Size:940K samsung
sfh9140.pdf
Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -19 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = -100V1 Lower RDS(ON) : 0.161 (Typ.)231.Gate 2. Drain 3. SourceAbsolute Maximum Ra
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