All MOSFET. DMG1029SV Datasheet

 

DMG1029SV MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMG1029SV
   Marking Code: GA1
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.3 nC
   trⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 4.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: SOT-563

 DMG1029SV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMG1029SV Datasheet (PDF)

 ..1. Size:228K  diodes
 dmg1029sv.pdf

DMG1029SV DMG1029SV

DMG1029SVCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-ResistanceDevice V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = 25C Low Input Capacitance 1.7 @ VGS = 10V 500mA Fast Switching Speed Q1 60V Ultra-Small Surface Mount Package 3 @ VGS = 4.5V 400mA Totally Lead-Free & Fully RoHS comp

 8.1. Size:159K  diodes
 dmg1024uv.pdf

DMG1029SV DMG1029SV

DMG1024UVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Connections: S

 8.2. Size:230K  diodes
 dmg1026uv.pdf

DMG1029SV DMG1029SV

DMG1026UVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) TA = +25C Low Input Capacitance Fast Switching Speed 1.8 @ VGS = 10V 440mA 60V Low Input/Output Leakage 2.1 @ VGS = 4.5V 410mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (No

 8.3. Size:133K  diodes
 dmg1023uv.pdf

DMG1029SV DMG1029SV

DMG1023UVDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Connections: S

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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