All MOSFET. DMG301NU Datasheet

 

DMG301NU Datasheet and Replacement


   Type Designator: DMG301NU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 1.8 nS
   Cossⓘ - Output Capacitance: 6.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: SOT-23
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DMG301NU Datasheet (PDF)

 ..1. Size:474K  diodes
 dmg301nu.pdf pdf_icon

DMG301NU

DMG301NU 25V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) TA = +25C Low Gate Threshold Voltage 4 @ VGS = 4.5V 0.26A 25V Low Input Capacitance 5 @ VGS = 2.7V 0.23A Fast Switching Speed Small Surface Mount Package Description ESD Protected Gate (>6kV Human Body Model) Totally Lead

 9.1. Size:279K  diodes
 dmg302pu.pdf pdf_icon

DMG301NU

DMG302PU25V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) TA = +25C Low Gate Threshold Voltage 10 @ VGS = -4.5V -0.17A -25V Low Input Capacitance 13 @ VGS = -2.7V -0.15A Fast Switching Speed Small Surfaced Mount Package Description ESD Protected Gate (>6kV Human Body Model) This new

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History: FQPF9N08 | NP180N04TUJ | SRT10N160LD | SM4186T9RL | NCE30P12BS | APT10021JFLL | SSW65R190S2

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