DMG3402L MOSFET. Datasheet pdf. Equivalent
Type Designator: DMG3402L
Marking Code: N32
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11.7 nC
trⓘ - Rise Time: 1.6 nS
Cossⓘ - Output Capacitance: 49.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SOT-23
DMG3402L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMG3402L Datasheet (PDF)
dmg3402l.pdf
DMG3402L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Low On-Resistance: ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = +25C Low Input Capacitance 52m @ VGS = 10V 4A Fast Switching Speed 30V 65m @ VGS = 4.5V 3A Low Input/Output Leakage 85m @ VGS = 2.5V 2A Totally Lead-Free & Fully RoHS Compliant (No
dmg3404l.pdf
DMG3404L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 5.8A 25m @ VGS = 10V Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 35m @ VGS = 4.5V 4.8A Halogen and Antimony Free.
dmg3406l.pdf
DMG3406L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 3.6A 50m @ VGS = 10V Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 70m @ VGS = 4.5V 2.8A Halogen and Antimony Free.
dmg3401lsn.pdf
DMG3401LSN30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-ResistanceTA = 25C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (Note 3) 85m @ VGS =
dmg3407ssn.pdf
Product specificationDMG3407SSNP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 50m @ VGS = -10V -4.0A Low Input/Output Leakage -30V Lead-Free Finish; RoHS compliant (Note 1) 72m @ VGS = -4.5V -3.3A Halogen and Antimony Free.
dmg3401lsn.pdf
Product specificationDMG3401LSN30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-ResistanceTA = 25C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SI2304A
