All MOSFET. DMG6601LVT Datasheet

 

DMG6601LVT Datasheet and Replacement


   Type Designator: DMG6601LVT
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.4 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TSOT26
 

 DMG6601LVT substitution

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DMG6601LVT Datasheet (PDF)

 ..1. Size:382K  diodes
dmg6601lvt.pdf pdf_icon

DMG6601LVT

DMG6601LVTCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID max Complementary MOSFETDevice V(BR)DSS RDS(ON) max Package TA = +25C Low On-Resistance Low Input Capacitance 55m @ VGS = 10V TSOT26 3.8A Q1 30V Fast Switching Speed 65m @ VGS = 4.5V TSOT26 3.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS =

 8.1. Size:511K  diodes
dmg6602svtq.pdf pdf_icon

DMG6601LVT

DMG6602SVTQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device V(BR)DSS RDS(on) Low Input Capacitance TA = +25C Fast Switching Speed 60m @ VGS = 10V 3.4A Low Input/Output Leakage Q1 30V 100m @ VGS = 4.5V 2.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antim

 8.2. Size:506K  diodes
dmg6602svt.pdf pdf_icon

DMG6601LVT

DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device V(BR)DSS RDS(on) Low Input Capacitance TA = +25C Fast Switching Speed 60m @ VGS = 10V 3.4A Low Input/Output Leakage Q1 30V 100m @ VGS = 4.5V 2.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Anti

 8.3. Size:1546K  cn vbsemi
dmg6602s.pdf pdf_icon

DMG6601LVT

DMG6602Swww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at V

Datasheet: DMG4511SK4 , DMG4710SSS , DMG4812SSS , DMG4932LSD , DMG4N65CT , DMG4N65CTI , DMG6301UDW , DMG6402LVT , IRFP250 , DMG6602SVTQ , DMG7401SFG , DMG7408SFG , DMG7410SFG , DMG7430LFG , DMG7702SFG , DMG9N65CT , DMG9N65CTI .

History: TSJ10N10AT | STW69N65M5 | 2SK1403A

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