DMG7430LFG Specs and Replacement
Type Designator: DMG7430LFG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21.2 nS
Cossⓘ - Output Capacitance: 145 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: POWERDI3333
DMG7430LFG substitution
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DMG7430LFG datasheet
dmg7430lfg.pdf
DMG7430LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25 C density end products 11m @ VGS = 10V 10.5A Occupies just 33% of the board area occupied by SO-8 enabling ... See More ⇒
dmg7408sfg.pdf
DMG7408SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Low RDS(ON) ensures on state losses are minimized TA = 25 C Small form factor thermally efficient package enables higher 23m @ VGS = 10V 7.0A density end products 30V O... See More ⇒
dmg7401sfg.pdf
DMG7401SFG P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25 C Small form factor thermally efficient package enables higher density end products 13m @ VGS = -10V -9.8A -30V Occupies just 33% of the board area occupied by SO-8 enabling ... See More ⇒
Detailed specifications: DMG4N65CTI , DMG6301UDW , DMG6402LVT , DMG6601LVT , DMG6602SVTQ , DMG7401SFG , DMG7408SFG , DMG7410SFG , BS170 , DMG7702SFG , DMG9N65CT , DMG9N65CTI , DMGD7N45SSD , DMHC10H170SFJ , DMHC3025LSD , DMHC4035LSD , DMJ7N70SK3 .
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