Справочник MOSFET. DMG7430LFG

 

DMG7430LFG Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DMG7430LFG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 21.2 ns
   Cossⓘ - Выходная емкость: 145 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: POWERDI3333
     - подбор MOSFET транзистора по параметрам

 

DMG7430LFG Datasheet (PDF)

 ..1. Size:217K  diodes
 dmg7430lfg.pdf pdf_icon

DMG7430LFG

DMG7430LFGGreenN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25C density end products 11m @ VGS = 10V 10.5A Occupies just 33% of the board area occupied by SO-8 enabling

 9.1. Size:151K  diodes
 dmg7408sfg.pdf pdf_icon

DMG7430LFG

DMG7408SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Low RDS(ON) ensures on state losses are minimized TA = 25C Small form factor thermally efficient package enables higher 23m @ VGS = 10V 7.0A density end products 30V O

 9.2. Size:260K  diodes
 dmg7401sfg.pdf pdf_icon

DMG7430LFG

DMG7401SFGP-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products 13m @ VGS = -10V -9.8A -30V Occupies just 33% of the board area occupied by SO-8 enabling

 9.3. Size:464K  diodes
 dmg7401sfgq.pdf pdf_icon

DMG7430LFG

DMG7401SFGQ P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized BVDSS RDS(ON) Max TA = +25C Small Form Factor Thermally Efficient Package Enables Higher Density End Products 13m @ VGS = -10V -9.8A -30V Occupies Just 33% of The Board Area Occupied by SO-8 25m

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Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: NVTFS002N04C | SI9945BDY

 

 
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