SFI2955 Datasheet and Replacement
Type Designator: SFI2955
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 49 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO262
SFI2955 substitution
SFI2955 Datasheet (PDF)
sfi2955 sfw2955.pdf

SFW/I2955Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -9.4 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.22 (Typ.)112331. Gate 2. Drai
Datasheet: SFF9140 , SFF9240 , SFF9244 , SFH154 , SFH9140 , SFH9154 , SFH9240 , SFH9244 , IRF4905 , SFI9510 , SFI9520 , SFI9530 , SFI9610 , SFI9614 , SFI9620 , SFI9624 , SFI9630 .
History: WST6002 | AONP38324 | STV160NF02LT4 | VS3622AE | 2SK3857MFV | RTR030N05 | FQA13N50CF
Keywords - SFI2955 MOSFET datasheet
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History: WST6002 | AONP38324 | STV160NF02LT4 | VS3622AE | 2SK3857MFV | RTR030N05 | FQA13N50CF



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