All MOSFET. DMHC3025LSD Datasheet

 

DMHC3025LSD Datasheet and Replacement


   Type Designator: DMHC3025LSD
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 122 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SO-8
 

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DMHC3025LSD Datasheet (PDF)

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DMHC3025LSD

DMHC3025LSD30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features 2 x N + 2 x P channels in a SOIC package ID max Low On-ResistanceDevice V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 25m @ VGS = 10V 6.0 N-Channel 30V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 40m @ VGS = 4.5V 4.6

Datasheet: DMG7408SFG , DMG7410SFG , DMG7430LFG , DMG7702SFG , DMG9N65CT , DMG9N65CTI , DMGD7N45SSD , DMHC10H170SFJ , 13N50 , DMHC4035LSD , DMJ7N70SK3 , DMN1019UFDE , DMN1019USN , DMN1019UVT , DMN1025UFDB , DMN1029UFDB , DMN1032UCB4 .

History: CSLR024 | SIHP12N60E

Keywords - DMHC3025LSD MOSFET datasheet

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