SFI9510
MOSFET. Datasheet pdf. Equivalent
Type Designator: SFI9510
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 32
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 3.6
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 9
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 50
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2
Ohm
Package:
TO262
SFI9510
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFI9510
Datasheet (PDF)
..1. Size:230K fairchild semi
sfi9510 sfw9510.pdf 
SFW/I9510Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 1.2n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -3.6 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.912 (Typ.)112331. Gate
9.1. Size:228K fairchild semi
sfw9520 sfi9520.pdf
SFW/I9520Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -6.0 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.444 (Typ.)112331. Gat
9.2. Size:210K samsung
sfi9530.pdf
SFW/I9530Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -10.5 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.225 (Typ.)112331. Gate 2.
9.3. Size:503K samsung
sfi9540.pdf
Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -17 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.161 (Typ.)112331. Gate 2. Drain 3. SourceAbsolut
9.4. Size:207K samsung
sfi9520.pdf
SFW/I9520Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.0 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.444 (Typ.)112331. Gate 2. D
Datasheet: SFF9240
, SFF9244
, SFH154
, SFH9140
, SFH9154
, SFH9240
, SFH9244
, SFI2955
, IRFP250
, SFI9520
, SFI9530
, SFI9610
, SFI9614
, SFI9620
, SFI9624
, SFI9630
, SFI9634
.
