Справочник MOSFET. SFI9510

 

SFI9510 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SFI9510
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 32 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 3.6 A
   Максимальная температура канала (Tj): 175 °C
   Время нарастания (tr): 20 ns
   Выходная емкость (Cd): 50 pf
   Сопротивление сток-исток открытого транзистора (Rds): 1.2 Ohm
   Тип корпуса: TO262

 Аналог (замена) для SFI9510

 

 

SFI9510 Datasheet (PDF)

 ..1. Size:230K  fairchild semi
sfi9510 sfw9510.pdf

SFI9510 SFI9510

SFW/I9510Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 1.2n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -3.6 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.912 (Typ.)112331. Gate

 9.1. Size:228K  fairchild semi
sfw9520 sfi9520.pdf

SFI9510 SFI9510

SFW/I9520Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -6.0 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.444 (Typ.)112331. Gat

 9.2. Size:210K  samsung
sfi9530.pdf

SFI9510 SFI9510

SFW/I9530Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -10.5 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.225 (Typ.)112331. Gate 2.

 9.3. Size:503K  samsung
sfi9540.pdf

SFI9510 SFI9510

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -17 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.161 (Typ.)112331. Gate 2. Drain 3. SourceAbsolut

 9.4. Size:207K  samsung
sfi9520.pdf

SFI9510 SFI9510

SFW/I9520Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.0 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.444 (Typ.)112331. Gate 2. D

Другие MOSFET... SFF9240 , SFF9244 , SFH154 , SFH9140 , SFH9154 , SFH9240 , SFH9244 , SFI2955 , MMIS60R580P , SFI9520 , SFI9530 , SFI9610 , SFI9614 , SFI9620 , SFI9624 , SFI9630 , SFI9634 .

 

 
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