DMN10H170SFDE Datasheet. Specs and Replacement

Type Designator: DMN10H170SFDE  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.66 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.1 nS

Cossⓘ - Output Capacitance: 36 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: U-DFN2020-6

  📄📄 Copy 

DMN10H170SFDE substitution

- MOSFET ⓘ Cross-Reference Search

 

DMN10H170SFDE datasheet

 ..1. Size:401K  diodes
 dmn10h170sfde.pdf pdf_icon

DMN10H170SFDE

DMN10H170SFDE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID max PCB Footprint of 4mm2 V(BR)DSS RDS(ON) max TA = +25 C Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 160m @ VGS = 10V 2.9A 100V Halogen and Antimony Free. Green Device ... See More ⇒

 3.1. Size:303K  diodes
 dmn10h170sfg.pdf pdf_icon

DMN10H170SFDE

DMN10H170SFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(ON) max TA = +25 C Low RDS(ON) ensures on state losses are minimized 122m @ VGS = 10V 2.9A Small form factor thermally efficient package enables higher 100V 133m @ VGS = 4.5V 2.7A density end ... See More ⇒

 4.1. Size:414K  diodes
 dmn10h170sk3.pdf pdf_icon

DMN10H170SFDE

DMN10H170SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(on) max Low Input Capacitance TC = +25 C 140m @ VGS = 10V 12A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100V 11A 160m @ VGS = 4.5V Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards ... See More ⇒

 4.2. Size:487K  diodes
 dmn10h170svt.pdf pdf_icon

DMN10H170SFDE

DMN10H170SVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low Gate Threshold Voltage V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance 160m @ VGS = 10V 2.6A Fast Switching Speed 100V 200m @ VGS = 4.5V 2.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (... See More ⇒

SHOW MORE

Detailed specifications: DMN1032UCB4, DMN1033UCB4, DMN1045UFR4, DMN10H099SFG, DMN10H099SK3, DMN10H100SK3, DMN10H120SE, DMN10H120SFG, STP65NF06, DMN10H170SFG, DMN10H170SK3, DMN10H170SVT, DMN10H220L, DMN10H220LE, DMN10H220LVT, DMN1150UFB, DMN1260UFA

Keywords - DMN10H170SFDE MOSFET specs

 DMN10H170SFDE cross reference

 DMN10H170SFDE equivalent finder

 DMN10H170SFDE pdf lookup

 DMN10H170SFDE substitution

 DMN10H170SFDE replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.