DMN10H170SFDE - параметры транзистора MOSFET, его аналоги, datasheet

DMN10H170SFDE Datasheet (PDF)

..1. Size:401K diodes
dmn10h170sfde.pdf pdf_icon

DMN10H170SFDE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID max PCB Footprint of 4mm2 V(BR)DSS RDS(ON) max TA = +25C Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 160m @ VGS = 10V 2.9A 100V Halogen and Antimony Free. Green Device

3.1. Size:303K diodes
dmn10h170sfg.pdf pdf_icon

DMN10H170SFGN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(ON) max TA = +25C Low RDS(ON) ensures on state losses are minimized 122m @ VGS = 10V 2.9A Small form factor thermally efficient package enables higher 100V 133m @ VGS = 4.5V 2.7A density end

4.1. Size:414K diodes
dmn10h170sk3.pdf pdf_icon

DMN10H170SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(on) max Low Input Capacitance TC = +25C 140m @ VGS = 10V 12A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100V 11A 160m @ VGS = 4.5V Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards

4.2. Size:487K diodes
dmn10h170svt.pdf pdf_icon

DMN10H170SVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low Gate Threshold Voltage V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 160m @ VGS = 10V 2.6A Fast Switching Speed 100V 200m @ VGS = 4.5V 2.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (

Другие MOSFET... DMN1032UCB4 , DMN1033UCB4 , DMN1045UFR4 , DMN10H099SFG , DMN10H099SK3 , DMN10H100SK3 , DMN10H120SE , DMN10H120SFG , IRFZ48N , DMN10H170SFG , DMN10H170SK3 , DMN10H170SVT , DMN10H220L , DMN10H220LE , DMN10H220LVT , DMN1150UFB , DMN1260UFA .