DMN2050LFDB
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN2050LFDB
Marking Code: M5
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.73
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 3.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5.7
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 72
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045
Ohm
Package:
U-DFN2020-6
DMN2050LFDB
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN2050LFDB
Datasheet (PDF)
..1. Size:231K diodes
dmn2050lfdb.pdf
DMN2050LFDBDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 45m @ VGS = 4.5V 4.5A Low Input/Output Leakage 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 55m @ VGS = 2.5V 4.1A Halogen and Antimony Free
6.1. Size:168K diodes
dmn2050l.pdf
DMN2050LN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 29m @VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 100m
6.2. Size:152K tysemi
dmn2050l.pdf
Product specificationDMN2050LN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 29m @VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 100m @VGS = 2.0V Terminal Connections
8.1. Size:327K diodes
dmn2056u.pdf
DMN2056U 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max BVDSS RDS(ON) max Low Gate Threshold Voltage TA = +25C Low Input Capacitance 38m @ VGS = 4.5V 4.0A Fast Switching Speed 20V 45m @ VGS = 2.5V 3.7A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
8.2. Size:480K diodes
dmn2058u.pdf
DMN2058U 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BVDSS RDS(ON) Max ID Max Low Gate Threshold Voltage Low Input Capacitance 4.6A 35m @ VGS = 10V Fast Switching Speed 20V Low Input/Output Leakage 40m @ VGS = 4.5V 4.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen an
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