All MOSFET. DMN24H11DS Datasheet

 

DMN24H11DS MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN24H11DS
   Marking Code: 4H1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.75 W
   Maximum Drain-Source Voltage |Vds|: 240 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
   Maximum Drain Current |Id|: 0.27 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 3.7 nC
   Rise Time (tr): 4.7 nS
   Drain-Source Capacitance (Cd): 6.9 pF
   Maximum Drain-Source On-State Resistance (Rds): 11 Ohm
   Package: SOT-23

 DMN24H11DS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN24H11DS Datasheet (PDF)

 ..1. Size:380K  diodes
 dmn24h11ds.pdf

DMN24H11DS DMN24H11DS

DMN24H11DS N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary Low Gate Threshold Voltage ID V(BR)DSS RDS(ON) Low Input Capacitance TA = +25C Fast Switching Speed 11 @ VGS = 10V 0.27A 240V Small Surface Mount Package 12 @ VGS = 4.5V 0.26A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony

 8.1. Size:280K  diodes
 dmn24h3d5l.pdf

DMN24H11DS DMN24H11DS

DMN24H3D5L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID V(BR)DSS RDS(ON) Low Input Capacitance TA = +25C 3.5 @ VGS = 10V 0.48A Fast Switching Speed 240V 0.48A 3.5 @ VGS = 4.5V Small Surface Mount Package 6.0 @ VGS = 3.3V 0.37A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 9.1. Size:151K  diodes
 dmn2400uv.pdf

DMN24H11DS DMN24H11DS

DMN2400UVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-563 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish Ma

 9.2. Size:374K  diodes
 dmn2400ufb.pdf

DMN24H11DS DMN24H11DS

DMN2400UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage Low Input Capacitance 0.55 @ VGS = 4.5V 0.75A Fast Switching Speed 20V 0.75 @ VGS = 2.5V 0.63A Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protect

 9.3. Size:456K  diodes
 dmn2400ufb4.pdf

DMN24H11DS DMN24H11DS

DMN2400UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: X2-DFN1006-3 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound; Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage

 9.4. Size:319K  diodes
 dmn2400ufd.pdf

DMN24H11DS DMN24H11DS

DMN2400UFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Very low Gate Threshold Voltage, 1.0V Max TA = +25C Low Input Capacitance 0.9A 0.6 @ VGS = 4.5V Fast Switching Speed 0.7A 0.8 @ VGS = 2.5V 20V ESD Protected Gate 0.5A 1.0 @ VGS = 1.8V Totally Lead-Free & F

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , AO3407 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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