All MOSFET. DMN2501UFB4 Datasheet

 

DMN2501UFB4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN2501UFB4
   Marking Code: TN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.1 nC
   trⓘ - Rise Time: 6.4 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: X2-DFN1006-3

 DMN2501UFB4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN2501UFB4 Datasheet (PDF)

 ..1. Size:570K  diodes
 dmn2501ufb4.pdf

DMN2501UFB4 DMN2501UFB4

DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V Max. TA = +25C Low Input Capacitance 0.4 @ VGS = 4.5V 1.5A Fast Switching Speed 20V 0.5 @ VGS = 2.5V 1.3A Ultra-Small Surfaced Mount Package 0.7 @ VGS = 1.8V 1.1A

 8.1. Size:124K  diodes
 dmn2500ufb4.pdf

DMN2501UFB4 DMN2501UFB4

DMN2500UFB4N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = 25C Low Input Capacitance Fast Switching Speed 0.4 @ VGS = 4.5V 1A 20V Ultra-Small Surfaced Mount Package 0.7 @ VGS = 1.8V 0.8A Ultra-low package profile, 0.4mm max

 9.1. Size:278K  diodes
 dmn2550ufa.pdf

DMN2501UFB4 DMN2501UFB4

DMN2550UFA20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package Height ID max V(BR)DSS RDS(ON) max 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25C 0.45 @ VGS = 4.5V Low On-Resistance0.55 @ VGS = 2.5V Very Low Gate Threshold Voltage, 1.0V Max 20V 0.6 A 0.75 @ VG

 9.2. Size:279K  diodes
 dmn25d0ufa.pdf

DMN2501UFB4 DMN2501UFB4

DMN25D0UFA25V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 0.4mm ultra low profile package for thin application V(BR)DSS RDS(on) TA = +25C 0.48mm2 package footprint, 16 times smaller than SOT23 Low VGS(th), can be driven directly from a battery 4 @ VGS = 4.5V 0.32A 25V Low RDS(on) 5 @ VGS = 2.7V 0.28A ESD Protected Gate (>6kV Hu

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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