DMN2501UFB4 Datasheet and Replacement. Cross Reference Search

DMN2501UFB4 Datasheet (PDF)

..1. Size:570K diodes
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DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V Max. TA = +25C Low Input Capacitance 0.4 @ VGS = 4.5V 1.5A Fast Switching Speed 20V 0.5 @ VGS = 2.5V 1.3A Ultra-Small Surfaced Mount Package 0.7 @ VGS = 1.8V 1.1A

8.1. Size:124K diodes
dmn2500ufb4.pdf pdf_icon

DMN2500UFB4N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = 25C Low Input Capacitance Fast Switching Speed 0.4 @ VGS = 4.5V 1A 20V Ultra-Small Surfaced Mount Package 0.7 @ VGS = 1.8V 0.8A Ultra-low package profile, 0.4mm max

9.1. Size:278K diodes
dmn2550ufa.pdf pdf_icon

DMN2550UFA20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package Height ID max V(BR)DSS RDS(ON) max 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25C 0.45 @ VGS = 4.5V Low On-Resistance0.55 @ VGS = 2.5V Very Low Gate Threshold Voltage, 1.0V Max 20V 0.6 A 0.75 @ VG

9.2. Size:279K diodes
dmn25d0ufa.pdf pdf_icon

DMN25D0UFA25V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 0.4mm ultra low profile package for thin application V(BR)DSS RDS(on) TA = +25C 0.48mm2 package footprint, 16 times smaller than SOT23 Low VGS(th), can be driven directly from a battery 4 @ VGS = 4.5V 0.32A 25V Low RDS(on) 5 @ VGS = 2.7V 0.28A ESD Protected Gate (>6kV Hu

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .