DMN2550UFA Specs and Replacement

Type Designator: DMN2550UFA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 6.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: X2-DFN0806-3

DMN2550UFA substitution

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DMN2550UFA datasheet

 ..1. Size:278K  diodes
 dmn2550ufa.pdf pdf_icon

DMN2550UFA

DMN2550UFA 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package Height ID max V(BR)DSS RDS(ON) max 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25 C 0.45 @ VGS = 4.5V Low On-Resistance 0.55 @ VGS = 2.5V Very Low Gate Threshold Voltage, 1.0V Max 20V 0.6 A 0.75 @ VG... See More ⇒

 9.1. Size:570K  diodes
 dmn2501ufb4.pdf pdf_icon

DMN2550UFA

DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V Max. TA = +25 C Low Input Capacitance 0.4 @ VGS = 4.5V 1.5A Fast Switching Speed 20V 0.5 @ VGS = 2.5V 1.3A Ultra-Small Surfaced Mount Package 0.7 @ VGS = 1.8V 1.1A ... See More ⇒

 9.2. Size:124K  diodes
 dmn2500ufb4.pdf pdf_icon

DMN2550UFA

DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = 25 C Low Input Capacitance Fast Switching Speed 0.4 @ VGS = 4.5V 1A 20V Ultra-Small Surfaced Mount Package 0.7 @ VGS = 1.8V 0.8A Ultra-low package profile, 0.4mm max... See More ⇒

 9.3. Size:279K  diodes
 dmn25d0ufa.pdf pdf_icon

DMN2550UFA

DMN25D0UFA 25V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 0.4mm ultra low profile package for thin application V(BR)DSS RDS(on) TA = +25 C 0.48mm2 package footprint, 16 times smaller than SOT23 Low VGS(th), can be driven directly from a battery 4 @ VGS = 4.5V 0.32A 25V Low RDS(on) 5 @ VGS = 2.7V 0.28A ESD Protected Gate (>6kV Hu... See More ⇒

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Detailed specifications: DMN2300UFL4, DMN2320UFB4, DMN2400UFB, DMN2400UFD, DMN24H11DS, DMN24H3D5L, DMN2500UFB4, DMN2501UFB4, 8205A, DMN25D0UFA, DMN2990UFA, DMN2990UFZ, DMN3008SFG, DMN3010LFG, DMN3010LK3, DMN3015LSD, DMN3016LDN

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.