DMN3016LDN Specs and Replacement

Type Designator: DMN3016LDN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.5 nS

Cossⓘ - Output Capacitance: 119 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: V-DFN3030-8

DMN3016LDN substitution

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DMN3016LDN datasheet

 ..1. Size:366K  diodes
 dmn3016ldn.pdf pdf_icon

DMN3016LDN

DMN3016LDN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance 20m @ VGS = 10V 7.3A Fast Switching Speed N-Channel 30V 6.7A 24m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Dev... See More ⇒

 6.1. Size:394K  1
 dmn3016lps-13.pdf pdf_icon

DMN3016LDN

DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25 C Fast Switching Speed 12m @ VGS = 10V 10.8A ... See More ⇒

 6.2. Size:347K  diodes
 dmn3016lps.pdf pdf_icon

DMN3016LDN

DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25 C Fast Switching Speed 12m @ VGS = 10V 10.8A ... See More ⇒

 6.3. Size:266K  diodes
 dmn3016lfde.pdf pdf_icon

DMN3016LDN

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Detailed specifications: DMN2550UFA, DMN25D0UFA, DMN2990UFA, DMN2990UFZ, DMN3008SFG, DMN3010LFG, DMN3010LK3, DMN3015LSD, 2N7002, DMN3016LFDE, DMN3016LK3, DMN3016LPS, DMN3016LSS, DMN3018SFG, DMN3018SSD, DMN3018SSS-13, DMN3024SFG

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.