DMN3016LSS Specs and Replacement

Type Designator: DMN3016LSS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.5 nS

Cossⓘ - Output Capacitance: 119 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SO-8

DMN3016LSS substitution

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DMN3016LSS datasheet

 ..1. Size:286K  diodes
 dmn3016lss.pdf pdf_icon

DMN3016LSS

DMN3016LSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C 12m @ VGS = 10V 10.3 A Fast Switching Speed 30V 9.3 A 16m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3... See More ⇒

 6.1. Size:394K  1
 dmn3016lps-13.pdf pdf_icon

DMN3016LSS

DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25 C Fast Switching Speed 12m @ VGS = 10V 10.8A ... See More ⇒

 6.2. Size:347K  diodes
 dmn3016lps.pdf pdf_icon

DMN3016LSS

DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25 C Fast Switching Speed 12m @ VGS = 10V 10.8A ... See More ⇒

 6.3. Size:266K  diodes
 dmn3016lfde.pdf pdf_icon

DMN3016LSS

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Detailed specifications: DMN3008SFG, DMN3010LFG, DMN3010LK3, DMN3015LSD, DMN3016LDN, DMN3016LFDE, DMN3016LK3, DMN3016LPS, AO3401, DMN3018SFG, DMN3018SSD, DMN3018SSS-13, DMN3024SFG, DMN3025LFG, DMN3025LSS, DMN3026LVT, DMN3029LFG

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.