DMN3016LSS
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN3016LSS
Marking Code: N3016LS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 10.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 11.3
nC
trⓘ - Rise Time: 16.5
nS
Cossⓘ -
Output Capacitance: 119
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
SO-8
DMN3016LSS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN3016LSS
Datasheet (PDF)
..1. Size:286K diodes
dmn3016lss.pdf 
DMN3016LSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C 12m @ VGS = 10V 10.3 A Fast Switching Speed 30V 9.3 A 16m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3
6.1. Size:394K 1
dmn3016lps-13.pdf
DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25C Fast Switching Speed 12m @ VGS = 10V 10.8A
6.2. Size:347K diodes
dmn3016lps.pdf
DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25C Fast Switching Speed 12m @ VGS = 10V 10.8A
6.3. Size:266K diodes
dmn3016lfde.pdf
DMN3016LFDEN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm profile ideal for low profile applications ID max V(BR)DSS RDS(ON) max PCB footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 12m @ VGS = 10V 10A Low On-Resistance 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 16m @ VGS = 4.5V 8.5A
6.4. Size:462K diodes
dmn3016lk3.pdf
DMN3016LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(on) Low On-Resistance TC = +25C Fast Switching Speed 12m @ VGS = 10V 37.8A Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 30V 16m @ VGS = 4.5V 32.8A Halogen and Antimony Free. Green D
6.5. Size:366K diodes
dmn3016ldn.pdf
DMN3016LDN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 20m @ VGS = 10V 7.3A Fast Switching Speed N-Channel 30V 6.7A 24m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Dev
6.6. Size:266K inchange semiconductor
dmn3016lk3.pdf
isc N-Channel MOSFET Transistor DMN3016LK3FEATURESDrain Current I = 37.8A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
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