SFI9630 Datasheet. Specs and Replacement

Type Designator: SFI9630  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO262

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SFI9630 datasheet

 ..1. Size:256K  fairchild semi
 sfi9630 sfw9630.pdf pdf_icon

SFI9630

SFW/I9630 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.5 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) 0.581 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu... See More ⇒

 8.1. Size:207K  samsung
 sfi9634.pdf pdf_icon

SFI9630

SFW/I9634 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -5.0 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -250V 2 Low RDS(ON) 0.876 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maxim... See More ⇒

 9.1. Size:259K  fairchild semi
 sfi9624 sfw9624.pdf pdf_icon

SFI9630

SFW/I9624 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.7 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -250V 2 Low RDS(ON) 1.65 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum... See More ⇒

 9.2. Size:263K  fairchild semi
 sfi9644 sfw9644.pdf pdf_icon

SFI9630

SFW/I9644 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = -8.6 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -250V 2 Low RDS(ON) 0.549 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu... See More ⇒

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Detailed specifications: SFI2955, SFI9510, SFI9520, SFI9530, SFI9610, SFI9614, SFI9620, SFI9624, AON7410, SFI9634, SFI9640, SFI9644, SFI9Z14, SFI9Z24, SFI9Z34, SFM9014, SFM9110

Keywords - SFI9630 MOSFET specs

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