DMN3024SFG
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN3024SFG
Marking Code: N34
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 7.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5
nC
trⓘ - Rise Time: 7.9
nS
Cossⓘ -
Output Capacitance: 97
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023
Ohm
Package:
POWERDI-3333-8
DMN3024SFG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN3024SFG
Datasheet (PDF)
..1. Size:157K diodes
dmn3024sfg.pdf
DMN3024SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Low RDS(ON) ensures on state losses are minimized TA = 25C Small form factor thermally efficient package enables higher 23m @ VGS = 10V 7.5A density end products 30V O
7.1. Size:669K diodes
dmn3024lk3.pdf
A Product Line ofDiodes IncorporatedDMN3024LK330V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Low gate drive 24m @ VGS= 10V 14.4A Green component and RoHS compliant (Note 1) 30
7.2. Size:687K diodes
dmn3024lsd.pdf
A Product Line ofDiodes IncorporatedDMN3024LSD30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 24m @ VGS= 10V 7.2A 30V 36m @ VGS= 4.5V 5.8A M
7.3. Size:305K diodes
dmn3024lss.pdf
A Product Line ofDiodes IncorporatedDMN3024LSS30V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 24m @ VGS= 10V 8.5A 30V 36m @ VGS= 4.5V 6.9A Mechan
7.4. Size:265K inchange semiconductor
dmn3024lk3.pdf
isc N-Channel MOSFET Transistor DMN3024LK3FEATURESDrain Current I = 14.4A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
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