DMN3024SFG - Даташиты. Аналоги. Основные параметры

DMN3024SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Low RDS(ON) ensures on state losses are minimized TA = 25C Small form factor thermally efficient package enables higher 23m @ VGS = 10V 7.5A density end products 30V O

A Product Line ofDiodes IncorporatedDMN3024LK330V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Low gate drive 24m @ VGS= 10V 14.4A Green component and RoHS compliant (Note 1) 30

A Product Line ofDiodes IncorporatedDMN3024LSD30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 24m @ VGS= 10V 7.2A 30V 36m @ VGS= 4.5V 5.8A M

A Product Line ofDiodes IncorporatedDMN3024LSS30V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 24m @ VGS= 10V 8.5A 30V 36m @ VGS= 4.5V 6.9A Mechan

isc N-Channel MOSFET Transistor DMN3024LK3FEATURESDrain Current I = 14.4A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu